FDD6690A 数据手册
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FDD6690A 8 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDD6690A
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 3.3W;56W
- Total Gate Charge (Qg@Vgs): 18nC@5V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1230pF@15V
- Continuous Drain Current (Id): null;46A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,12A
- Package: TO-252
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FDD669